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| Ordering number : ENN7312 FW503 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW503 DC / DC Converter Applications Features * Package Dimensions * 4.4 6.0 Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high8 density mounting. The FW503 incorporates two chips being equivalent to the MCH3306 and the SBS004 in one package. [FW503] 5 0.3 5.0 1.5 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 10 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (2000mm2!0.8mm) 10S -20 10 --3 -12 2 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : W503 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2502 TS IM TA-100186 No.7312-1/5 FW503 Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=1mA IF=0.5A IF=1A VR=15V VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. 15 0.3 0.35 42 15 0.35 0.4 500 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGSS=8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-3A ID=--3A, VGS=--4.5V ID=--2.5A, VGS=-2.5V ID=--0.1A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A IS=--3A, VGS=0 --20 --10 10 --0.3 3.5 5 130 170 230 410 60 40 9 27 42 38 5.0 0.6 1.2 --1.0 --1.2 170 240 340 --1.0 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Electrical Connection 8 7 6 5 (Top view) 1 2 3 4 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Switching Time Test Circuit [MOSFET] VIN 0V --4.5V VIN ID= --3A RL=3.3 VDD= --10V trr Test Circuit [SBD] Duty10% 100mA 10mA trr FW503 D PW=10s D.C.1% VOUT 10s G --5V P.G 50 S 100mA 50 100 10 No.7312-2/5 FW503 --3 ID -- VDS V [MOSFET] --3 ID -- VGS [MOSFET] VDS=10V --3.0 V --2 .5 .8 --1 V --1.5V Drain Current, ID -- A --4.0 V --2 Drain Current, ID -- A --2 --10 . 0V --1 --1 Ta= 7 0 0 --0.2 --0.4 --0.6 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 25 C --0.8 --1.0 --25 C --1.2 --1.4 VGS= --1.0V 5C --1.6 --1.8 --2.0 400 Drain-to-Source Voltage, VDS -- V IT05278 RDS(on) -- VGS [MOSFET] Ta=25C 400 IT05279 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 300 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 300 250 200 150 100 50 0 --60 3.0A 200 .1A I D=0 =1.8V , V GS 2.5V V GS= ID=0.1A 150 100 50 0 0 --2 2.5A .5A, I D=2 A, I D=3.0 .0V V GS=4 --4 --6 --8 --10 --40 --20 0 20 40 60 80 100 120 140 160 10 IT05280 Gate-to-Source Voltage, VGS -- V [MOSFET] yfs -- ID Ambient Temperature, Ta -- C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IT05281 IF -- VSD Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V [MOSFET] VGS=0 1.0 7 5 3 2 C -25 =Ta C 25C 75 Forward Current, IF -- A Ta =7 5C 25 C --0.3 --0.4 --0.5 --0.6 --0.7 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 3 5 7 --10 IT05282 --0.01 --0.2 --0.8 --25 --0.9 C --1.0 --1.1 --1.2 SW Time -- ID [MOSFET] VDD= --10V VGS= --4V 1000 7 5 Drain-to-Source Forward Voltage, VF -- V IT05283 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Ciss Switching Time, SW Time -- ns 2 100 7 5 3 2 Ciss, Coss, Crss -- pF 3 2 td (off) tf 100 7 5 3 2 Coss tr td(on) Crss 10 7 5 3 --0.1 10 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A --10 IT05284 7 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain-to-Source Voltage, VDS -- V IT05285 No.7312-3/5 FW503 --10 VGS -- Qg VDD= --10V ID= --3A [MOSFET] 3 2 --10 7 5 ASO IDP= --12A ID= --3A [MOSFET] <10s Gate-to-Source Voltage, VGS -- V --8 10 Drain Current, ID -- A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 1m m 0m s 10 s s 0 s --6 10 10 s --4 --2 Operation in this area is limited by RDS(on). 0 0 1 2 3 4 5 6 7 8 9 10 --0.01 --0.01 Ta=25C Single pulse Mounted on a ceramic board (2000mm2!0.8mm) 10S 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC 2.5 IT05286 PD -- Ta Drain-to-Source Voltage, VDS -- V IT05287 [MOSFET] Allowable Power Dissipation, PD -- W 2.0 M ou nte do na 1.5 ce ram ic bo ard 1.0 (20 00 mm 2 !0 .8m 0.5 m) 1 0S 1u nit 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 2 1.0 IT05288 IF -- VF [SBD] Reverse Current, IR -- mA 7 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 IR -- VR 2 Ta=1 5C [SBD] Forward Current, IF -- A 5 3 2 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 IT02957 100C 12 5 10 C 0 75 C 50 C 25 C C 75C 50C Ta = 25C 5 10 15 IT02958 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 180 360 1.0 Reverse Voltage, VR -- V 3 2 PF(AV) -- IO [SBD] C -- VR [SBD] f=1MHz Interterminal Capacitance, C -- pF 1.2 1.4 IT02959 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave 360 100 7 5 3 2 10 7 5 3 2 1.0 1.0 (1) (2) (4) (3) Sine wave 2 3 5 7 10 2 IT02960 Average Forward Current, IO -- A Reverse Voltage, VR -- V No.7312-4/5 FW503 12 IS -- t IS [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 10 8 20ms t 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s IT00636 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2002. Specifications and information herein are subject to change without notice. PS No.7312-5/5 |
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